Ruey-Dar Chang is a Professor and the Chairman of the Department of Electronics Engineering, Chang Gung University. Previously, he was the Director of the Center for Technology Licensing and Patenting at Chang Gung University. From 1990 to 1994, he was with the Electronics Research and Service Organization/Industrial Technology Research Institute (ERSO/ITRI), Hsinchu, where he was engaged in the development of process simulation and device design for the Submicron Project. He was a founding member of the Vanguard International Semiconductor Corporation, Hsinchu, where he was responsible for DRAM device design and TCAD. His research interests include CMOS process modeling, doping characterization, TFT technology modeling and power devices.

Our laboratory was established in 1998 to support training and education in materials analysis for the Department of Electronics Engineering. Our research focuses on process simulation and technology computer-aided design (TCAD) for integrated circuits (ICs) and low-temperature polysilicon (LTPS). The applications of our research results are primarily in the design of IC devices and flat panel displays.  Device design is the core of semiconductor technology development. Design rules and compact device models are the basis for circuit design. Device engineers need to simultaneously adjust multiple process conditions using TCAD tools and analyze unknown physical phenomena through electrical analysis. To meet the requirements of system-on-chip designs, different devices are integrated into a single chip, making device design even more critical in semiconductor research and development.