Assistant Professor Balaji Gururajan earned his PhD in Thin Film Physics from Anna University, Chennai, India, in 2020. From March 2021 to January 2023, he served as a Postdoctoral Researcher sponsored by MOST - Taiwan at the Department of Electrical Engineering, Yuan Ze University. His research during this time focused on optimizing the type II superlattice structures of InAs/GaSb layers using Molecular Beam Epitaxy for Infra-Red Photodetectors. 

Since February 2023, he has been working as a full-time Assistant Professor at the International School of Electrical Engineering for Bachelors. During his PhD, he was recruited as a Junior Research Fellow (JRF) for a DST-SERB project sponsored by the Government of India. His current research areas encompass fabrication of Kesterite thin film solar cells, transparent solar cells, and ultraviolet photodetectors using vacuum techniques. He possesses practical expertise in thin film deposition using vacuum techniques such as RF / DC sputtering, Reactive sputtering, Molecular Beam Epitaxy & several other chemical deposition methods. He also has the experience to use various characterization techniques for analysis. Currently he is a Co-PI in a NSTC project, the project revolves around the exploration of the characteristics of CuCrO2 delafossite materials deposited using RF sputtering, this material is a potential p-type semiconductors for UV photodetectors integrated on flexible substrates.

In recognition of his research work, he was honored with the Young Scientist Travel Grant award by DST-India in 2019, enabling him to present his research in the United States. Furthermore, he has published 10 international journal articles and has showcased his research findings at prestigious conferences and workshops in the United States, Taiwan, France, and Sri Lanka.

The Group C of the Electrical Engineering Department houses the Nano-Optoelectronic Device Laboratory, equipped with various thin film deposition facilities. These include RF/DC and Pulsed DC sputtering techniques. Additionally, the laboratory features an RTA (Rapid Thermal Annealing) furnace capable of reaching temperatures up to 800 degrees Celsius. Other essential equipment includes a chemical bench, annealing furnaces, and sulphurization chambers.

For thin film characterization purposes, the laboratory offers an array of advanced instruments. These include a UV-Vis spectrophotometer, Atomic Force Microscopy (AFM), Raman spectroscopy, Photoluminescence spectroscopy, quantum efficiency measurements, Hall measurements, Four-probe IV (current-voltage) measurements, and a Solar simulator. These facilities enable comprehensive analysis and evaluation of thin film properties and performance.